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The FM25CL64 is a 64-kilobit nonvolaTIle memoryemploying an advanced ferroelectric process. Aferroelectric random access memory or FRAM isnonvolaTIle and performs reads and writes like aRAM. It provides reliable data retenTIon for 45 yearswhile eliminaTIng the complexities, overhead, andsystem level reliability problems caused byEEPROM and other nonvolatile memories.Unlike serial EEPROMs, the FM25CL64 performswrite operations at bus speed. No write delays areincurred. The next bus cycle may commenceimmediately without the need for data polling. Thenext bus cycle may start immediately. In addition, theproduct offers virtually unlimited write endurance,orders of magnitude more endurance than EEPROM.Also, FRAM exhibits much lower power duringwrites than EEPROM since write operations do notrequire an internally elevated power supply voltagefor write circuits.These capabilities make the FM25CL64 ideal fornonvolatile memory applications requiring frequentor rapid writes. Examples range from data collection,where the number of write cycles may be critical, todemanding industrial controls where the long writetime of EEPROM can cause data loss.The FM25CL64 provides substantial benefits to usersof serial EEPROM as a hardware drop-inreplacement. The FM25CL64 uses the high-speedSPI bus, which enhances the high-speed writecapability of FRAM technology. Devicespecifications are guaranteed over an industrialtemperature range of -40°C to +85°C.
