资 源 简 介
The FM25H20 is a 2-megabit nonvolaTIle memoryemploying an advanced ferroelectric process. Aferroelectric random access memory or FRAM isnonvolaTIle and performs reads and writes like aRAM. It provides reliable data retenTIon for 10 yearswhile eliminaTIng the complexities, overhead, andsystem level reliability problems caused by SerialFlash and other nonvolatile memories.Unlike Serial Flash, the FM25H20 performs writeoperations at bus speed. No write delays are incurred.Data is written to the memory array immediatelyafter it has been transferred to the device. The nextbus cycle may commence without the need for datapolling. The product offers virtually unlimited writeendurance, orders of magnitude more endurance thanSerial Flash. Also, FRAM exhibits lower powerconsumption than Serial Flash.These capabilities make the FM25H20 ideal fornonvolatile memory applications requiring frequentor rapid writes or low power operation. Examplesrange from data collection, where the number ofwrite cycles may be critical, to demanding industrialcontrols where the long write time of Serial Flash cancause data loss.The FM25H20 provides substantial benefits to usersof Serial Flash as a hardware drop-in replacement.The FM25H20 uses the high-speed SPI bus, whichenhances the high-speed write capability of FRAMtechnology. Device specifications are guaranteedover an industrial temperature range of -40°C to+85°C.
