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The FM24CL64 is a 64-kilobit nonvolaTIle memoryemploying an advanced ferroelectric process. Aferroelectric random access memory or FRAM isnonvolaTIle and performs reads and writes like aRAM. It provides reliable data retenTIon for 45 yearswhile eliminaTIng the complexities, overhead, andsystem level reliability problems caused byEEPROM and other nonvolatile memories.The FM24CL64 performs write operations at busspeed. No write delays are incurred. The next buscycle may commence immediately without the needfor data polling. In addition, the product offers writeendurance orders of magnitude higher thanEEPROM. Also, FRAM exhibits much lower powerduring writes than EEPROM since write operationsdo not require an internally elevated power supplyvoltage for write circuits.These capabilities make the FM24CL64 ideal fornonvolatile memory applications requiring frequentor rapid writes. Examples range from data collectionwhere the number of write cycles may be critical, todemanding industrial controls where the long writetime of EEPROM can cause data loss. Thecombination of features allows more frequent datawriting with less overhead for the system.The FM24CL64 provides substantial benefits to usersof serial EEPROM, yet these benefits are available ina hardware drop-in replacement. The FM24CL64 isavailable in industry standard 8-pin SOIC and DFNpackages using a familiar two-wire protocol. It isguaranteed over an industrial temperature range of-40°C to +85°C.
