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The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenideinfrared emitTIng diode opTIcally coupled to a monolithic silicon phototransistordetector.• Most Economical Optoisolator Choice for Medium Speed, Switching ApplicaTIons• Meets or Exceeds All JEDEC Registered SpecificaTIons• To order devices that are tested and marked per VDE 0884 requirements, thesuffix ”V” must be included at end of part number. VDE 0884 is a test option.Applications• General Purpose Switching Circuits• Interfacing and coupling systems of different potentials and impedances• I/O Interfacing• Solid State Relays
1. Always design to the specified minimum/maximum electrical limits (where applicable).2. Current Transfer Ratio (CTR) = IC/IF x 100%.3. For test circuit setup and waveforms, refer to Figure 11.4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
