资 源 简 介
The adopTIon of Silicon-on-Insulator (SOI) substrates for themanufacturing of mainstream semiconductor products such asmicroprocessors has given SOI research an unprecedented impetus. In thepast, novel transistor structures proposed by SOI scienTIsts were oftenconsidered exoTIc and impracTIcal, but the recent success of SOI in thefield of microprocessor manufacturing has finally given this technologythe credibility and acceptance it deserves.The classical CMOS structure is reaching its scaling limits and “end-ofroadmap”alternative devices are being investigated. Amongst the differenttypes of SOI devices proposed, one clearly stands out: the multigate fieldeffect transistor (multigate FET). This device has a general “wire-like”shape with a gate electrode that controls the flow of current betweensource and drain. Multigate FETs are commonly referred to as “multi(ple)-gate transistors”, “wrapped-gate transistors”, “double-gate transistors”,“FinFETs”, “tri(ple)-gate transistors”, “Gate-all-Around transistors”, etc.The International Technology Roadmap for Semiconductors (ITRS)recognizes the importance of these devices and calls them “Advanced nonclassicalCMOS devices”.
