cy62168ev30 mobl®16兆位（2米×8）静态RAM

The CY62168EV30 is a high performance CMOS staTIc RAM organized as 2 M words by 8-bits. This device features advanced circuit design to provide an ultra low acTIve current. This is ideal for providing More Battery Life （MoBL） in portable applicaTIons such as cellular telephones. The device also has an automaTIc power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected （Chip Enable 1 （CE1） HIGH or Chip Enable 2 （CE2） LOW）。 The input and output pins （I/O0 through I/O7） are placed in a high impedance state when： the device is deselected （Chip Enable 1 （CE1） HIGH or Chip Enable 2 （CE2） LOW）， outputs are disabled （OE HIGH）， or a write operation is in progress （Chip Enable 1 （CE1） LOW and Chip Enable 2 （CE2） HIGH and WE LOW）。 Write to the device by taking Chip Enable 1 （CE1） LOW and Chip Enable 2 （CE2） HIGH and the Write Enable （WE） input LOW. Data on the eight I/O pins （I/O0 through I/O7） is then written into the location specified on the address pins （A0 through A20）。 Read from the device by taking Chip Enable 1 （CE1） and Output Enable （OE） LOW and Chip Enable 2 （CE2） HIGH while forcing Write Enable （WE） HIGH. Under these conditions， the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input and output pins （I/O0 through I/O7） are placed in a high impedance state when the device is deselected （CE1 HIGH or CE2 LOW）， the outputs are disabled （OE HIGH）， or a write operation is in progress （CE1 LOW and CE2 HIGH and WE LOW）。 See the Truth Table on page 11 for a complete description of read and write modes. For a complete list of related documentation， click here.