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基于硅的射频前端的超宽带无线电

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  • 上传时间:2021-07-13
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  • 标      签: 超宽带 无线电

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Ultra-wideband (UWB) technology enables high data-rate short-range communication, in excess of hundred megabit-per-seconds and up to multi-gigabit-per-seconds, over a wide spectrum of frequencies, while keeping power consumption at low levels. This low power operation results in a less-interfering co-existence with other existed communication technologies (e.g., UNII bands). In addition to carrying a huge amount of data over a distance of up to 230 feet at very low power (less than 0.5mW), the UWB signal has the ability to penetrate through the doors and other obstacles that tend to reflect signals at more limited bandwidths and higher power densities. The key attributes of UWB technology, therefore, include; high data rates, ranging and communication applications, low equipment cost, and immunity to the multipath fading. These features have motivated the researchers to investigate performance-optimized integrated circuit (IC) solutions for UWB technology. To best utilize the entire UWB spectrumspecified by the FCC from 3.1GHz up to 10.6 GHz, the constituent transceiver should operate across this wide spectral band. On the other hand, designing RF front-end circuits, particularly in CMOS technology, for UWB transceivers entails stringent challenges associated with wideband requirements. In fact, the RF front-end has to exhibit wideband RF characteristics of gain, noise figure, and linearity, as well as low power consumption. The scope of this book includes design and analysis of novel wideband RF front-ends for UWB transceivers in silicon technologies. A great deal of emphasis will be made on the exploration of new performance-optimized distributed integrated circuit topologies for UWB wireless radios.
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