资 源 简 介
Medium-Power PlasTIc PNPSilicon Transistors...designed for driver circuits, switching, and amplifierapplicaTIons. These high–performance plasTIc devices feature:• Low SaturaTIon Voltage —VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp• Excellent Power Dissipation Due to Thermopad Construction —PD = 30 W @ TC = 25C• Excellent Safe Operating Area• Gain Specified to IC = 1.0 Amp• Complement to NPN 2N4921, 2N4922, 2N4923
