资 源 简 介
A low voltage, micro-power, curvature-corrected bandgap reference is presented that is capable of
working down to input voltages of 1.1 V in a relaTIvely inexpensive process, MOSIS 2 mm technology. This is
a vanilla N-well CMOS process technology with an added P-base layer. Second order curvature correcTIon
for this reference is accomplished by a versaTIle piecewise-linear current-mode technique. The 0.595 V
precision reference achieved a line regulaTIon performance of 408 ppm/V for input voltages between 1.2 and 10
V. The circuit only used 14 mA of quiescent current flo