cy62138fv30 mobl® 2兆位（256 K×8）静态RAM

The CY62138FV30 is a high performance CMOS staTIc RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low acTIve current. This is ideal for providing More Battery Life™ （MoBL） in portable applicaTIons such as cellular telephones. The device also has an automaTIc power down feature that significantly reduces power consumption. Place the device into standby mode reducing power consumption when deselected （CE1 HIGH or CE2 LOW）。 To write to the device， take Chip Enable （CE1 LOW and CE2 HIGH） and Write Enable （WE） inputs LOW. Data on the eight I/O pins （I/O0 through I/O7） is then written into the location specified on the address pins （A0 through A17）。 To read from the device， take Chip Enable （CE1 LOW and CE2 HIGH） and Output Enable （OE） LOW while forcing Write Enable （WE） HIGH. Under these conditions， the contents of the memory location specified by the address pins appear on the I/O pins. The eight input and output pins （I/O0 through I/O7） are placed in a high impedance state when the device is deselected （CE1 HIGH or CE2 LOW）， the outputs are disabled （OE HIGH）， or during a write operation （CE1 LOW and CE2 HIGH and WE LOW）.