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过程增强提高IGBT的电机驱动应用效率
选择IGBT时，设计师面对的是一批建筑的选择，有利于IGBT的一种形式，如对称与不对称阻塞，在另一个。本文将回顾由不同的IGBT架构提供的设计方案。
绝缘栅双极晶体管（IGBT）是一种常见的电机驱动应用的选择，由于其高阻塞电压和低成本相比，功率MOSFET具有类似的电压等级。该技术允许变频驱动器的设计，这被看作是良好的节能系统。
IGBT提供的开关能力，需要驱动重要的逆变器级。通常情况下，一个600 V额定阻断电压是驱动操作从200-240伏电源需要1200伏惠460 VAC的应用。
The IGBT’s structure evolved from the power MOSFET during the 1980s， in response to the need to increase the blocking voltage. This was achieved by adding an extra PN juncTIon to the drain of MOSFET architecture， creaTIng a bipolar transistor structure and an overall NPNP semiconductor. As with most power transistors made today， the construcTIon of the transistor is verTIcal rather than horizontal， with the collector of the PNP bipolar transistor placed on the backside of the die. A P or P+ tub that contains N-doped wells links the source/emitter and gate regions. Current flows through this tub into a comparatively wide N-doped drift region into the collector. However， because it has the insulated gate of a MOSFET， the device as a whole remains voltage-controlled rather than current-controlled. The gains of the interlocked bipolar transistors need to be carefully controlled to suppress operation as an NPNP thyristor.
