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TLP250 pdf,TLP250 datasheet (A

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  • 标      签: TLP

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The TOSHIBA TLP250 consists of a GaAlAs light emitTIng diode and aintegrated photodetector.This unit is 8−lead DIP package.TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.• Input threshold current: IF=5mA(max.)• Supply current (ICC): 11mA(max.)• Supply voltage (VCC): 10−35V• Output current (IO): ±1.5A (max.)• Switching TIme (tpLH/tpHL): 1.5μs(max.)• IsolaTIon voltage: 2500Vrms(min.)• UL recognized: UL1577, file No.E67349• OpTIon (D4) typeVDE approved: DIN VDE0884/06.92,certificate No.76823Maximum operating insulation voltage: 630VPKHighest permissible over voltage: 4000VPK
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