Silicon-Based RF Front-Ends fo

Ultra-wideband (UWB) technology enables high data-rate short-range communication,in excess of hundred megabit-per-seconds and up to multi-gigabit-per-seconds,over a wide spectrum of frequencies, while keeping power consumption at low levels.This low power operation results in a less-interfering co-existence with otherexisted communication technologies (e.g., UNII bands).In addition to carrying a huge amount of data over a distance of up to 230 feetat very low power (less than 0.5mW), the UWB signal has the ability to penetratethrough the doors and other obstacles that tend to reflect signals at more limitedbandwidths and higher power densities.The key attributes of UWB technology, therefore, include; high data rates,ranging and communication applications, low equipment cost, and immunity tothe multipath fading. These features have motivated the researchers to investigateperformance-optimized integrated circuit (IC) solutions for UWB technology.To best utilize the entire UWB spectrumspecified by the FCC from 3.1GHz up to10.6 GHz, the constituent transceiver should operate across this wide spectral band.On the other hand, designing RF front-end circuits, particularly in CMOS technology,for UWB transceivers entails stringent challenges associated with widebandrequirements. In fact, the RF front-end has to exhibit wideband RF characteristicsof gain, noise figure, and linearity, as well as low power consumption. The scope ofthis book includes design and analysis of novel wideband RF front-ends for UWBtransceivers in silicon technologies. A great deal of emphasis will be made on theexploration of new performance-optimized distributed integrated circuit topologiesfor UWB wireless radios.