资 源 简 介
This application note describes using theIBM43RF0100EV19 evaluation board for theIBM43RF0100 Silicon-Germanium (SiGe) heterojunctionbi-polar transistor (HBT) in the 1900 MHzfrequency band.The IBM43RF0100 HBT is a discrete transistor suitablefor a wide rage of applications such as pagers,mobile and portable phones, spread-spectrum transceivers,and other RF devices. The high linearityand low power consumption of the IBM43RF0100make it ideal for wireless digital protocol applicationssuch as CDMA and TDMA.This evaluation board implements a low noise amplifier(LNA) designed for 1900 MHz operation.The evaluation board is used to measureIBM43RF0100 HBT characteristics such as noise,power, distortion, and s-parameters under a varietyof operating conditions.
