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DESCRIPTION The Si1865DDL includes a p- and n-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel， with an external resistor， can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protecTIon and can be driven by logic signals as low as 1.5 V. The Si1865DDL operates on supply lines from 1.8 V to 12 V， and can drive loads up to 1.1 A.
The Si1865DDL is ideally suited for high-side load switching in portable applicaTIons. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-TImes can be tailored to different load types.
