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HSC1815 NPN EPITAXIAL PLANAR TRANSISTORDescripTIonThe HSC1815 is designed for use in driver stage of AF amplifiergeneral purpose amplificaTIon.Absolute Maximum RaTIngs• Maximum TemperaturesStorage Temperature ............................................................................................ -55 ~ +150 °CJuncTIon Temperature ................................................................................... +150 °C Maximum• Maximum Power DissipationTotal Power Dissipation (Ta=25°C) ............................................................................... 400 mW• Maximum Voltages and Currents (Ta=25°C)VCBO Collector to Base Voltage ........................................................................................ 60 VVCEO Collector to Emitter Voltage ..................................................................................... 50 VVEBO Emitter to Base Voltage ............................................................................................. 5 VIC Collector Current ....................................................................................................... 150 mAIB Base Current ............................................................................................................... 50 mA
