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系统内非易失性闪速存储器再编程的原理、软硬件注意事项及对80

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  • 上传时间:2021-06-23
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  • 标      签: 再编程 闪速 存储器

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1.0 INTRODUCTION  11.1 PROM Programmer vsSystem-Processor ControlledProgramming  11.2 Information Download andUpload  1Version Updates (Download)  1Data Acquisition (Upload)  12.0 DEVICE FEATURES AND ISWAPPLICATIONCONSIDERATIONS  22.1 Flash Memory Pinouts  22.2 Command RegisterArchitecture  4Simplified Processor Interface  4Command Register Reset  5Data Protection on PowerTransitions  52.3 VPP Specifications  63.0 HARDWARE DESIGN FOR ISW  63.1 VPP Generation  63.1.1 Regulating Down fromHigher Voltage  63.1.2 Pumping 5V up to 12V  63.1.3 Absolute Data Protection ÐVPP On/Off Control  73.1.4 Writes and Reads duringVPP Transitions  73.1.5 Other VPP Considerations  73.1.6 VPP Circuitry and TraceLayout  83.2 Communications Ð Getting Datato and from the FlashMemory  8CONTENTS PAGE4.0 SOFTWARE DESIGN FOR ISW  84.1 System Integration Ð Boot CodeRequirements  84.1.1 ISW Flag Check  94.2 Communication Protocols andFlash Memory ISW  94.3 Data Accumulation SoftwareTechniques  104.4 Reprogramming Routines  104.4.1 Quick-Erase Algorithm  10Algorithm Timing Delays  10High Performance ParallelDevice Erasure  114.4.2 Quick-Pulse ProgrammingAlgorithm  12Algorithm Timing Delays  12High Performance ParallelDevice Programming  124.4.3 Pulse Width TimingTechniques  13Software Methods andExamples  13Hardware Methods  135.0 SYSTEM DESIGN EXAMPLE: AN80C186 DESIGN  146.0 SUMMARY  15
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