资 源 简 介
低压低内阻MOS管
G3241S23RG is the P-Channel logic enhancement mode G3241SRG3RG 2006. Rev.1 P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION power field effect transistor which is produced using high cell density， DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parTIcularly suited for low voltage applicaTIon such as cellular phone and notebook computer power management， other battery powered circuits， and low in-line power loss are required. The product is in a very small outline surface mount package.
FEATURE ： -20V/-3.3A， RDS（ON） = 30m-ohm （Typ.） @VGS = -4.5V ： -20V/-2.8A， RDS（ON） = 40m-ohm @VGS = -2.5V ： -20V/-2.3A， RDS（ON） = 53m-ohm @VGS = -1.8V ： Super high density cell design for extremely low RDS（ON） ： ExcepTIonal on-resistance and maximum DC current capability ： SOT-23-3L package design
