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IRF9540 pdf

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  • 上传时间:2022-01-04
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  • 标      签: IRF

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These are P-Channel enhancement mode silicon gatepower field effect transistors. They are advanced powerMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the breakdown avalanche modeof operaTIon. All of these power MOSFETs are designed forapplicaTIons such as switching regulators, switchingconvertors, motor drivers, relay drivers, and drivers for highpower bipolar switching transistors requiring high speed andlow gate drive power. They can be operated directly fromintegrated circuits.Formerly Developmental Type TA17521.
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