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The LM5112 MOSFET gate driver provides high peak gatedrive current in the TIny LLP-6 package (SOT23 equivalentfootprint) or an 8-Lead exposed-pad MSOP package, withimproved power dissipaTIon required for high frequency operaTIon.The compound output driver stage includes MOSand bipolar transistors operaTIng in parallel that together sinkmore than 7A peak from capacitive loads. Combining theunique characteristics of MOS and bipolar devices reducesdrive current variation with voltage and temperature. Undervoltagelockout protection is provided to prevent damage tothe MOSFET due to insufficient gate turn-on voltage. TheLM5112 provides both inverting and non-inverting inputs tosatisfy requirements for inverting and non-inverting gatedrive with a single device type.
