资 源 简 介
Features• Maximum RaTIng. . . . . . . . . . . . . . . . . . . . . . . . . . . 500V• Ability to Interface and Drive Standard and CurrentSensing N-Channel Power MOSFET/IGBT Devices• CreaTIon and Management of a FloaTIng Power Supplyfor Upper Rail Drive• Simultaneous ConducTIon Lockout• Overcurrent Protection• Single Low Current Bias Supply Operation• Latch Immune CMOS Logic• Peak Drive in Excess of 0.5A
