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智能电压型引导块闪速存储器(BV,BE系列)与3 V 高级引

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  • 上传时间:2021-12-13
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  • 标      签: 智能电压型 存储器

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1.0 INTRODUCTION .............................................52.0 3 VOLT ADVANCED BOOT BLOCKOVERVIEW ....................................................52.1 2.7 V–3.6 V Operation..................................52.2 Enhanced Parameter Blocking .....................52.3 Erase Suspend ............................................72.4 Program Suspend ........................................72.5 1.8 V I/O Capability ......................................73.0 SmartVoltage AND 3 VOLT ADVANCEDBOOT BLOCK COMPATIBILITY ...................73.1 Pinout...........................................................73.2 Device ID .....................................................83.3 5 Volt/12 Volt Operation ...............................83.4 Block Locking...............................................83.5 AC/DC Characteristics .................................93.5.1 DC Specifications(VCCQ = 2.7 V–3.6 V)............................93.5.2 DC(VCCQ = 1.8 V–2.2 V)............................93.5.3 AC Read Specifications.......................103.5.4 AC Write Specifications .......................103.6 Reset Operations .......................................114.0 CONCLUSION...............................................11APPENDIX A: Block Mapping of SmartVoltageand Advanced Boot Block Flash Memory .12APPENDIX B: Additional Information ...............14FIGURESFigure 1. Blocking for the 8-Mbit AdvancedBoot Block ..........................................6Figure 2. 48-Lead TSOP Jumper Option forVPP, BYTE# and VCCQ ........................8Figure 3. AC Waveform: Deep Power-Down /Reset Operation................................11TABLESTable 1. Pinout Differences for 48-Lead TSOP..7Table 2. BYTE# and VCCQ Jumper Options.......8Table 3. SmartVoltage and Advanced BootBlock Device IDs .................................8Table 4. SmartVoltage and Advanced BootBlock 2.7 V–3.6 V Spec Differences ....9
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