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DescripTIon The IX2113 is a high voltage integrated circuit that can drive high speed MOSFETs and IGBTs that operate at up to +600V. The IX2113 is configured with independent high-side and low-side referenced output channels, both of which can source and sink 2A. The floaTIng high-side channel can drive an N-channel power MOSFET or IGBT 600V from the common reference. Manufactured on IXYS Integrated Circuits Division‘s proprietary high-voltage BCDMOS on SOI (silicon on insulator) process, the IX2113 is extremely robust, and is virtually immune to negaTIve transients. The UVLO circuit prevents the turn-on of the MOSFET or IGBT unTIl there is sufficient VBS or VCC supply voltage. Propagation delays are matched for use in high frequency applications. The IX2113 is available in a 14-pin DIP package and in a 16-pin SOIC package.