资 源 简 介
Each isolator in this series has a 890 nm (for the 4N2_ series) and 935nm (for the 4N4_ series) wavelengthinfrared emitTIng diode and a NPN silicon phototransistor, which are mounted in a hermeTIcally sealed TO-78package. Devices are designed for military and/or harsh environments. Burn-in condiTIon is VCE = 10V, IF = 40mA,PD = 275 mW, TA = 25° C. The suffix letter “A” denotes the collector is electrically isolated from the case.The 4N22, 4N22A, 4N23, 4N23A,4N24, and 4N24A (TX, TXV) devices are processed to MIL-PRF-19500/486.The 4N47, 4N47A, 4N48, 4N48A, 4N49, and 4N49A (TX, TXV) devices are processed to MIL-PRF-19500/548.Please contact your local representaTIve or OPTEK for more information.
